Metal Carbide - Hardened Alloys and Semiconductors

Terms of Reference

Refer to the post, Terms of Use Agreement Xerqon Technologies, WIX Blog 2025, for early, legal due diligence.

Metal Carbide (Carbide)

The Agreement for the Intellectual Property rights to the ownership of the Carbide manufacturing processes is based on a withdrawn, provisional patent application by the rights holder, Xerqon Pty Ltd, ABN 97661410108 2025. The application number is 2023904146, at IP Australia - the patent office of the Commonwealth Government of Australia.

The Hardened Carbide Compounds and Semiconducting Effects of the Alloy Carbides

Lower carbon concentrations will increase surface, electron field. Greater carbon concentrations will produce a greater positron field at the substrate surface. The Carbide process is to control electron or positron field concentration in a chemical lattice - the physical structure at the fundamental atomic or molecular array level, by increasing or reducing carbon levels in that lattice.

The alloy carbides rely on the differential between the steady conductive effects of carbide and those of metals in the composite metals. In this form the carbon behaves metallically.

For the most chemical and corrosion resistant carbide, combine carbon (preferably from black coal) to a very reactive metal. The metal will react easily with carbon to form a stable alloy with highest degree of lustre for that metal amalgam when peak chemical resistance is reached. This runs counter-intuitively with reference to the elementary thermoelectric or chemical profile.

(1)    Metal carbide is a chemical lattice - both semi-amorphous and homogeneously arrayed.

(2)    The metal is smelted and has powdered, black coal or milled carbon, included with the metal when the metal is molten.

(3)    Even lead will emerge with the steel-like lustre when this is done to lead shot. It has the hardness of copper and the ability to resist bending similarly.

(4)    Metal is more coherent in its conductivity of electric current and heat when it is in its most homogeneous, smelted form.

(5)    The metal is even more coherent or less flawed when it is smelted and allowed to cool at just below molten temperature for many hours until naturally reaching room temperature and peak hardness.

(6)    The temperature can be controlled by a valve system to maintain the same operating environmental pressure while the temperature falls to 20 degrees Celsius.

(7)    The more carbon in the metal, the longer the cooling process must be. Decoherence will come from the carbon rather than air holes or fissures from ductile processing or malleable processing of the metal.

(8)    Amalgamating carbon with the metal has the following effects:

        8.1    Lowest Carbon

                Metallically bonded metal and carbon

Highest lustre

                Greatest hardening

                Highest carbide coherence

                Most Conductive

                Most ductile and malleable

        8.2    Medium Carbon

                Metallically bonded metal and carbon

Medium lustre

                Medium hardening

                Medium carbide coherence

                Less Conductive

                Less ductile and malleable

        8.3    Highest Carbon

Covalently bonded metal and carbon

Lowest lustre

                Metal Softening with brittleness

                Lowest carbide coherence

                Least conductive or highest semiconducting capacity

                Most brittle - must be cast very slowly - up to a 24 hour period

Semiconductor Application

Metal Carbide (Carbide) stands as the new super-substrate to replace expensive Silicon and the more costly Germanium. (See the post about metal carbide.)

(9) Increasing the Electrons or Positrons (Holes) - the Carbide Process

Increasing surface electrons - creating greater conductor or semiconductor surface, thermo-electric conductivity stems from treating the surface with higher time-evolved concentrations of fluid acid. A fluid basic application would increase the hole count. That increase thermoelectric absorption at the surface of a conductor or semiconductor. Carbide will do both. Lower carbon concentrations will increase surface, electron field. Greater carbon concentrations will produce a greater positron field at the substrate surface. The Carbide process is to control electron or positron field concentration in a chemical lattice - the physical structure at the fundamental atomic or molecular array level, by increasing or reducing carbon levels in that lattice.

(10) Substrate & Junction Analysis

Metal carbide lowers the technological barriers to entry to the semiconductor industry - especially when hot-formed, as described in the post, Hot-Formed Molten Substrate. When the usually very brittle carbon saturated, metal carbide is hot formed, it will remain robust for semiconducting purposes for most mainstream metals. The carbon reduces the electron density - replacing it with a positron/hole denser environment instead. The process would form a P junction and the remaining lower carbon content metal of the same variety would form the N junction. The lowest cost transistor type, given the alternative metal elements/alloys, used for semiconducting is the the NPN transistor. There is less carbon doping in that example than in a PNP transistor.

(11) Micro-Motherboard

The best substrate to adhere the metal to is hot-formed soda glass.

(12) Circuit Micro-Printing

Micro, acid-etching will cut out the necessary circuitry to be adhered to the soda glass, without materials wastage.

(13) Carbide Semiconductor Industry Outlook

Carbide promises a future of most semiconducting materials.

© Xerqon ABN 97661410108 2025