Carbide™ - Hardened Alloys and Semiconductors
Updated: 6 days ago
Carbide Codicil to the Xerqon Intellectual Property Agreement (Carbide Codicil)
Metal carbides (Carbide) may not be produced outside of a Xerqon issued contract of sale pursuant to the marketing or production of Carbide.
Xerqon prohibits the marketing of Carbide for offensive hardware of warfare in any of its strike capability forms including paramilitary or police weapons.
Carbide may be used for any other form of defensive military facilities or hardware.
The production or use of Carbide for artillery or ordnance is strictly forbidden by the terms of this agreement.
The terms of reference of the Carbide Codicil conclude here.
The Carbide Codicil has been instituted to prevent a race towards military supremacy of the type which could result in a spike in artillery capability. The artillery would be lightweight, with much greater flight capability and significantly more hardened than tungsten.
It is likely to be a swift arms race which produces an a devastating world war based on artillery power.
Artillery is many times less financially costly than missiles and other munitions. The world cannot such a breach in contract.
Xerqon will appeal to the World Trade Organisation for a tariff resolution for any breach of contract. The tariffs may even be of the order of an intensive trade embargo. The support of the United Nations General Assembly will be sought to achieve that objective.
Carbide
The Agreement for the Intellectual Property rights to the ownership of the Carbide manufacturing processes is based on a withdrawn, provisional patent application by the rights holder, Xerqon Pty Ltd, ABN 97661410108 2025. The application number is 2023904146, at IP Australia - the patent office of the Commonwealth Government of Australia, 2023. 2023 is the establishment year of the first publishing of Carbide, as manufacturing methodology, globally.
The Hardened Carbide Compounds and Semiconducting Effects of the Alloy Carbides
In Carbide, carbon may behave as a metal in some, lower concentrations (carbide alloy), and in substantially higher concentrations, in Carbide, it may behave as a dielectric (carbide semiconductor).
As an example the strongest carbonised aluminium carbide will, in major instance, outcompete titanium for strength and flexibility. The hardest carbonised Iron carbide will similarly outcompete standard tungsten for hardness.
Carbide is always somewhat more semiconducting than the isolated metal. The more carbon introduced, the more semiconducting the carbide alloy. A similar effect will always occur with an alloy, where one less conducting metal renders the entire alloy more semiconducting, as more of that metal is introduced to the alloy. The other metal would be more conductive in isolation.
Carbide Carbonation
Carbide carbonation is achieved by melting already smelted metal element, and adding the correct amount per required ratio in milled powder of pure carbon. Granulated carbon will not perform that function, chemically. The carbide carbonation will not occur with the granulated variety.
The world’s most accessible source which is less costly on volume than coked coal is Zimbabwean black coal. Carbide is being claimed by false founders of the Intellectual Property rights to ownership the process as a Graphine Metal. That is simply Carbide by another (false) name.
Further Analysis
The value of carbide is taken from the price ration of steel (the harder metal) to iron. That amounts to approximately 15:1. For carbide, the superior metal (including metallic carbon) the price ratio is 100:1 on average. This comes properties such as aluminium carbide having the potential to outcompete titanium for strength and low weight, mutually exclusive of each other.
Aluminium carbide would yield more strength than titanium. It would be far more more pervasively used than titanium. Airframes, motor vehicle frames, ship bulkheads are among some it the aluminium carbides potential, extended application. The price of titanium will surrender its favourable position to the aluminium carbides.
Technical note: All matter is either in amorphous or geometric lattice form.
Aluminium carbide may replace titanium for many mechanical engineering applications.
Lower carbon concentrations will increase strength while maintaining some useful pliability. Greater carbon concentrations will produce a greater positron field at the substrate surface. The carbonation process is to control electron or positron field concentration in a chemical lattice.
Carbonation enhances the physical structure at the fundamental atomic or molecular array level, by increasing or reducing carbon levels in that lattice. When carbon or any semiconductor is thermoelectrically similar to a metal in any form of lattice it is a metal. When carbon behaves as a dielectric in any lattice it is a dielectric.
The alloy carbides rely on the differential between the steady conductive effects of carbide and those of metals in the composite metals. In this form the carbon behaves metallically.
For the most chemical and corrosion resistant carbide, combine carbon (preferably from milled, black coal powder) to a very reactive metal. The metal will react easily with carbon to form a stable alloy with highest degree of lustre for that metal amalgam when peak chemical resistance is reached. This runs counter-intuitively with reference to the elementary thermoelectric or chemical profile.
(1) Metal carbide is a chemical lattice - both semi-amorphous and homogeneously arrayed.
(2) The metal is smelted and has powdered, black coal or milled carbon, included with the metal when the metal is molten.
(3) Even lead will emerge with the nickel-like lustre when this is done to lead shot. It has the hardness of aluminium and the ability to resist bending similarly.
(4) Metal is more coherent in its conductivity of electric current and heat when it is in its most homogeneous form.
(5) The metal is even more coherent or less flawed when it is smelted and allowed to cool at just below molten temperature for many hours until naturally reaching room temperature and peak hardness. That process is significantly sped up via Xerqon’s warm forming modality. See the Xerqon blog article of similar name.
(6) The temperature can be controlled by a valve system to maintain the same operating environmental pressure while the temperature falls to 20° C or 293 K.
(7) The more carbon in the metal, the longer the cooling process must be. Decoherence will come from the carbon rather than air holes or fissures from ductile processing or malleable processing of the metal. That increases strength over the inclusions of microfissures.
(8) Amalgamating carbon with the metal has the following effects:
8.1 Lowest Carbonation
Metallically bonded metal and carbon
Highest lustre
Greatest hardening
Highest carbide coherence
Most conductive
Most ductile and malleable
8.2 Medium Carbonation
Metallically bonded metal and carbon
Medium lustre
Medium hardening
Medium carbide coherence
Less Conductive
Less ductile and malleable
8.3 Highest Carbonation
Covalently bonded metal and carbon
Lowest lustre
Metal Softening with brittleness
Lowest carbide coherence
Least conductive or highest semiconducting capacity
Most brittle - must be cast very slowly - up to a 24 hour period, approximately
Fabrication Including Semiconductor Manufacture
Carbide stands as the new super-substrate to replace expensive Silicon and the more costly Germanium.
(9) To gain the maximum lattice hardening of carbide, treat the chemical bonding as metallic bonding with a view to completing the eight electrons in the metal and the carbon front the lowest common multiple of valences. See the article in this blog site, ‘Metallic Bonding/Reaction Formula’.
(10) Thermoelectrically, the carbide is most semiconducting as an alloy, as it approaches the dielectric state at the proportions stated at (9).
(11) Increasing the Electrons or Positrons (Holes) - the Carbide Process
Increasing surface electrons - creating greater conductor or semiconductor surface, thermo-electric conductivity stems from treating the surface with higher time-evolved concentrations of fluid acid. A fluid basic application would increase the hole count. That increase thermoelectric absorption at the surface of a conductor or semiconductor. Carbide will do both.
Lower carbon concentrations will increase surface, electron field. Greater carbon concentrations will produce a greater positron field at the substrate surface. The Carbide process is to control electron or positron field concentration in a chemical lattice - the physical structure at the fundamental atomic or molecular array level, by increasing or reducing carbon levels in that lattice.
(12) Substrate & Junction Analysis
Metal carbide lowers the technological barriers to entry to the semiconductor industry - especially when hot-formed, as described in the post, Hot-Formed, Molten Substrate. When the usually very brittle carbon saturated, metal carbide is hot formed, it will remain robust for semiconducting purposes for most mainstream metals.
The carbon reduces the electron density - replacing it with a positron/hole denser environment instead. The process would form a P junction and the remaining lower carbon content metal of the same variety would form the N junction. The lowest cost transistor type, given the alternative metal elements/alloys, used for semiconducting is the the NPN transistor. There is less carbon doping in that example than in a PNP transistor.
(13) Integrsted Circuitry Substrate
The best substrate to adhere the metal to is low conductivity carbide, for heat distribution. The circuitry, including resistors, will be a short circuit to the metal carbide substrate.
(14) Circuit Micro-Printing
Micro soldering will be the adhesion process of the circuitry to the substrate.
(15) Carbide Semiconductor Industry Outlook
Carbide promises the future in substitution of most semiconducting materials.
© Xerqon Pty Ltd 2026
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